Term | Meaning | Taught in |
|---|---|---|
Always-on domain (AON) | The power domain that is never switched, holding the reset and power controller, the PLL, the interrupt controller and the slow peripherals, SRAM0 retention and the ROM. | |
Break-even time | How long a domain must stay off for the leakage saved to repay the energy of switching it off and on. | |
Cold start | Bringing the chip from no power to the first fetch: supplies, crystal, PLL, resets and clocks in order. NanoSoC hardware takes 53.948 us. | |
DVFS | Changing voltage and frequency together with the state of the load. Raise voltage before frequency, lower frequency before voltage. | |
Dynamic power | Power from switching: roughly activity x capacitance x voltage squared x frequency. NanoSoC RUN dynamic power is 77.10 mW. | |
Isolation cell | A clamp on a signal from a powered-down domain into a powered one, forcing a safe value. NanoSoC has 114, all clamping to 0. | |
Leakage power | Power drawn with no switching. NanoSoC leakage is 5.64 mW in RUN and IDLE and 1.24 mW in SLEEP. | |
Power domain | A region with its own supply that can be on or off independently. NanoSoC has PD_AON and the switchable PD_SW. | |
Power good (PGOOD) | A signal that a supply has reached its operating range. The sequencer waits for it before releasing isolation and reset. | |
Power sequencer | The state machine that orders clamp, clock gate, reset and switch on the way down and the reverse on the way up, with timeouts. | |
Power state | A named operating condition. NanoSoC has RUN (82.74 mW), IDLE (16.89 mW) and SLEEP (1.40 mW). | |
Retention | Keeping state while power is reduced. NanoSoC SRAM0 stays in PD_AON and sits in retention at 60% of its leakage in SLEEP. | |
UPF | The public standard format for power intent: domains, supplies, switches, isolation and retention. The integrator owns that it matches the design. |
Back to the Glossary for the other groups and the look-alike terms.